• DocumentCode
    1840914
  • Title

    A physically-based behavioral snapback model

  • Author

    Ida, Richard ; McAndrew, Colin C.

  • Author_Institution
    Freescale Semicond., Tempe, AZ, USA
  • fYear
    2012
  • fDate
    9-14 Sept. 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper presents an accurate and robust model for snapback in ESD clamps. Impact ionization, which triggers snapback, takes time to occur; our model introduces a behavioral time-dependent low resistance on-state current that, like real devices, smoothly and continuously turns on and off, thereby eliminating convergence issues during simulation.
  • Keywords
    electrostatic discharge; ionisation; ESD clamps; impact ionization; physically-based behavioral snapback model; time-dependent low resistance on-state current; Clamps; Computational modeling; Delay; Electrostatic discharges; Integrated circuit modeling; Robustness; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Print_ISBN
    978-1-4673-1467-1
  • Type

    conf

  • Filename
    6333317
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1840914