DocumentCode
1840981
Title
An offset compensation technique for bandgap voltage reference in CMOS technology
Author
Ruzza, S. ; Dallago, E. ; Venchi, G. ; Morini, S.
Author_Institution
Dept. of Electr. Eng., Univ. of Pavia, Pavia
fYear
2008
fDate
18-21 May 2008
Firstpage
2226
Lastpage
2229
Abstract
A precision integrated bandgap voltage reference in 0.35 mum CMOS technology is here presented. The circuit uses natural npn bipolar transistors as reference diodes. A particular attention was paid to the compensation of the several offsets that could strongly influence the performances of the reference. A very simple sample and hold technique for offset compensation is here presented. The proposed technique is straight forward for all bandgap topologies which use diodes with a terminal connected to the ground node or to the supply node. The temperature coefficient (TC) of the generated output voltage is 12.7 ppm/degC versus about 245 ppm/degC of the same circuit without offset compensation. A full description and an analytical expression for the proposed compensation technique are given. The results of the most relevant simulations are also reported. The circuit has been inserted in a test chip whose layout is shown.
Keywords
CMOS integrated circuits; compensation; reference circuits; transistor circuits; CMOS technology; bandgap voltage reference; bipolar transistor circuits; offset compensation; reference diodes; sample and hold; size 0.35 mum; temperature coefficient; Bipolar transistors; CMOS technology; Circuit simulation; Circuit testing; Circuit topology; Diodes; Integrated circuit technology; Land surface temperature; Photonic band gap; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541895
Filename
4541895
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