Title :
Effect of embedded-SiGe (eSiGe) on ESD TLP and VFTLP characteristics of diode-triggered silicon controlled rectifiers (DTSCRs)
Author :
Mishra, Rahul ; Li, Junjun ; Di Sarro, James ; Campi, John ; Gauthier, Robert
Author_Institution :
Semicond. R&D Center, IBM, Essex Junction, VT, USA
Abstract :
Effect of embedded-SiGe (eSiGe) in anode regions of DTSCRs during TLP and VFTLP testing is investigated. 100ns TLP results of DTSCRs with eSiGe show lower parasitic PNP beta, higher trigger voltage, higher holding voltage and premature snapback failure. Turn-on time measured during VFTLP testing is shown not to be affected by eSiGe due to the breakdown of SCR NW to PW/substrate junction during the initial overshoot.
Keywords :
Ge-Si alloys; anodes; electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; semiconductor diodes; semiconductor materials; thyristors; DTSCR; ESD TLP; SiGe; VFTLP characteristics; VFTLP testing; anode regions; diode-triggered silicon controlled rectifiers; holding voltage; parasitic PNP beta; premature snapback failure; substrate junction; time 100 ns; transmission lines pulser; trigger voltage; Anodes; Current measurement; Electrostatic discharges; Testing; Thumb; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-1467-1
