Title :
Pre-metal clean optimization for cluster defect prevention
Author :
Ku, S.Y. ; Lo, T.W. ; Shih, Y.J. ; Shi, C.J. ; Wang, C.H. ; Yu, Y.J.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
Pre-metal clean is a critical procedure before the metal loop in the salicide process. Surface defects such as the surface native oxide or any other contamination may result in a poor adhesion of Ti/TiN, for example, and hence the poor salicide formation. HF treatment with IPA dry is a widely used methodology for surface defect removal, and results in a clean surface which is water spot free and has less chemical oxide. However, a cluster type defect is an accompaniment of this treatment in the salicide process. The aim of this work is to provide an optimized cleaning procedure at pre-metal clean for mass production
Keywords :
adhesion; integrated circuit metallisation; integrated circuit yield; surface cleaning; surface contamination; IC yield; Si; Ti-TiN; ULSI devices; adhesion; cluster defect prevention; mass production; optimized cleaning procedure; pre-metal clean optimization; salicide process; surface contamination; surface defect removal; ultra large scale integration; Adhesives; Chemicals; Hafnium; Mass production; Semiconductor device manufacture; Surface cleaning; Surface contamination; Surface treatment; Tin; Water pollution;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.963024
