DocumentCode :
1841171
Title :
Requirements for Stable DC Biasing of High Gain Discrete Phemts During Wafer Level Screening
Author :
Finke, R.J. ; Pleasant, L.Mt. ; Willhite, J.R ; Chase, R.F.
Author_Institution :
Lockheed Martin Corporation, Martin Marietta Laboratories - Syracuse
Volume :
27
fYear :
1995
fDate :
19-19 May 1995
Firstpage :
92
Lastpage :
96
Abstract :
DC testing of unmatched dscrete PHEMT device wafers is complicated by the tendency of such devices to oscillate under DC bias due to their iugh gain and broad frequency range. For t h ~ sre ason, dscrete PHEW wafer level screening is often limited to a small set of parameters wluch can be measured without oscillation problems. such as pinch-off voltages. drain leakage currents, and drain breakdown voltages. The typical approach to eliminating such oscillations is empirical modification of probe impedances with chp components and test station cabling. In general, such approaches are unsuccessful. This paper presents a more rigorous approach to tlus problem. Analysis of PHEMT deice characteristics is used to define the device termination impedance requirements for stable device biasing. The wafer DC test setup is configured to acheve these impedance requirements at the evice "terminals" while also maintaining necessaq Kellin and sense connections to the PHEMT\´ die from the DC test equipment.
Keywords :
Electrical resistance measurement; Equations; Impedance; Kelvin; PHEMTs; Probes; Pulse measurements; Stability analysis; Test equipment; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ARFTG Conference Digest-Spring, 45th
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-5686-1
Type :
conf
DOI :
10.1109/ARFTG.1995.327110
Filename :
4119787
Link To Document :
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