DocumentCode :
1841187
Title :
Application of FEM technique in realization of PIN Diode attenuator
Author :
Varshney, Amit Kumar ; Pramanik, Samiran ; Shrivastav, A.K.
Author_Institution :
Univ. of Burdwan, Burdwan, India
fYear :
2009
fDate :
14-16 Dec. 2009
Firstpage :
1
Lastpage :
4
Abstract :
FEM analysis has been used to optimize various microstrip line sections used for designing PIN-Diode ?? attenuator used for phased array antenna applications. Results have been compared with the theoretical results obtained from closed form analysis expressions of microstrip line. An error of only 0.92% has been observed between the two results at 50?? characteristic impedance for unshielded microstrip line.
Keywords :
antenna phased arrays; attenuators; finite element analysis; microstrip lines; p-i-n diodes; FEM technique; PIN diode ?? attenuator; microstrip line section; phased array antenna; π attenuator; Finite Element Method; basis functions; characteristic impedance; sparse matrix;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Electromagnetics Conference (AEMC), 2009
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-4818-0
Electronic_ISBN :
978-1-4244-4819-7
Type :
conf
DOI :
10.1109/AEMC.2009.5430659
Filename :
5430659
Link To Document :
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