Title :
Accurate I-V Characterization of GaAs Heterojunction Bipolar Transistors Using A Precision Pulsed I-V System
Author :
Stewart, Ryan ; Pritchett, Sam ; DeHaan, Michael R. ; Brehm, Gailon
Author_Institution :
Texas Instruments RF/Microwave Technology Center, 13510 N Central Expressway P.O. Box 655474 MS 245, Dallas, Texas 75265
Abstract :
Accurate HBT I-V characterization using a precision VXI-based pulsed I-V system is presented. Narrow pulse (sub microsecond) characterization of HBTs minimizes the self-heating (thermal) effects, and trapping effects associated with I-V characterization. Long and short pulse width I-V measurements are compared, and observed thermal (conduction band and substrate) effects are discussed. This is the first accurate HBT pulsed (<1 microsecond) I-V characterization capability reported in the open literature.
Keywords :
Gallium arsenide; Hardware; Heterojunction bipolar transistors; Instruments; Knee; Pulse measurements; Radio frequency; Space vector pulse width modulation; Temperature; Thermal conductivity;
Conference_Titel :
ARFTG Conference Digest-Spring, 45th
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1995.327112
