Title :
A high performance (Al,Ga)As/GaAs MODFET butterfly adder chip for FFT computation
Author :
Akinwande, A.I. ; Betz, B.K. ; Mactaggart, I.R. ; Grider, D.E. ; Narum, D.H. ; Lange, T.H. ; Nohava, T.E. ; Nohava, J.C. ; Tetzlaff, D. ; Arch, D.K.
Author_Institution :
Honeywell Inc., Bloomington, MN, USA
Abstract :
A report is presented on a butterfly adder chip for high-speed computation of fast Fourier transforms (FFTs). It was fabricated using a 1- mu m self-aligned gate GaAs heterostructure FET (MODFET) technology. The chip receives products from a complex multiplier and generates radix-4 butterfly terms in 32 ns or radix-2 butterfly terms in 16 ns. It also provides the scaling necessary for satisfactory computation of a discrete Fourier transform (DFT) using fixed-point arithmetic. A total of 3800 DCFL gates and over 15700 active devices is required to implement the butterfly adder. The butterfly adder clocks at 262 MHz and it consumes 2.7 W. When used in conjunction with a companion complex multiplier chip of comparable size and other smaller support chips, the butterfly adder allows the computation of a complex DFT on 2048 samples in 100 mu s with a precision of 16 b.<>
Keywords :
Fourier transforms; III-V semiconductors; adders; aluminium compounds; digital arithmetic; fast Fourier transforms; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated logic circuits; large scale integration; 100 mus; 16 ns; 2.6 W; 262 MHz; 32 ns; AlGaAs-GaAs; DCFL gates; DFT; FFT computation; HFET; MODFET; butterfly adder chip; complex multiplier; direct-coupled FET logic; discrete Fourier transform; fast Fourier transforms; fixed-point arithmetic; heterostructure FET; high-speed computation; radix-2 butterfly terms; radix-4 butterfly terms; self-aligned gate; signal processing; Adders; Clocks; Discrete Fourier transforms; Fixed-point arithmetic; Gallium arsenide; HEMTs; High performance computing; MODFETs; Molecular beam epitaxial growth; Throughput;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69292