Title :
3-D magnetic nanostructures
Author :
Sautner, Joshua ; Punchihewa, Kasun ; Ilic, Bojan ; Vavassori, Paolo ; Metlushko, Anna ; Metlushko, Vitali
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
Abstract :
We investigated the influence of 3-D magnetic layer geometry on switching in magneto-electronic devices. We found that the 3-D topography of magnetic layer must absolutely be taken into consideration during the design phase since their inherent non-planarity profoundly affects their magnetization profile. Our initial results strongly indicate that the “non-flatness” of magnetic layer strongly influences the possible magnetic states, alters the switching mechanism and leads to totally new behavior, which was not observed in classic 2-D thin film magnetic structures. Our experimental results will be compared with detailed micromagnetic simulations.
Keywords :
MRAM devices; giant magnetoresistance; magnetisation; thin films; 2D thin film magnetic structures; 3D magnetic layer geometry; 3D magnetic nanostructures; giant magnetoresistance; magnetization profile; magneto-electronic devices; Magnetic devices; Magnetic domain walls; Magnetic domains; Magnetic multilayers; Magnetic switching; Magnetic tunneling; Switches;
Conference_Titel :
Electromagnetics in Advanced Applications (ICEAA), 2011 International Conference on
Conference_Location :
Torino
Print_ISBN :
978-1-61284-976-8
DOI :
10.1109/ICEAA.2011.6046502