Current-voltage, S-parameter, LFN properties in T-R-T type ESD/EMI filters with TVS Zener diodes developed using epitaxy-based IPD technology

Author

Hong, Woong-Ki ; Bouangeune, Daoheung ; Kil, Yeon-Ho ; Yang, Hyun-Duk ; Choi, Sang-Sik ; Cho, Deok-Ho ; Choi, Chel-Jong ; Shim, Kyu-Hwan

Author_Institution

Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea

fYear

2012

fDate

9-14 Sept. 2012

Firstpage

1

Lastpage

6

Abstract

We have developed the T-R-T type ESD/EMI filter using new transient voltage suppressor (TVS) Zener diodes and the epitaxy-based IPD technology. The performance of the filter has been examined in terms of I-V, s-parameter, and LFN properties. The properties demonstrated that the filter kept consistency in the excellent ESD robustness over the MM ±4 kV.

Keywords

S-parameters; Zener diodes; electromagnetic devices; electromagnetic interference; electrostatic discharge; low-pass filters; passive filters; ESD robustness; ESD-EMI low pass filter; I-V characteristics; LFN properties; S-parameter; T-R-T type ESD-EMI filters; TVS Zener diodes; current-voltage characteristics; epitaxy-based IPD technology; integrated passive devices; low frequency noise property; transient voltage suppressor; voltage -4 kV; voltage 4 kV; Capacitance; Electric shock; Electromagnetic interference; Electrostatic discharges; Leakage current; Noise; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th

Conference_Location

Tucson, AZ

ISSN

0739-5159

Print_ISBN

978-1-4673-1467-1

Type

conf

Filename

6333335