• DocumentCode
    1841412
  • Title

    Impact of snapback behavior on system level ESD performance with single and double stack of bipolar ESD structures

  • Author

    Laine, Jean-Philippe ; Salles, Alain ; Besse, Patrice ; Delmas, Antoine

  • Author_Institution
    Freescale Semicond., Toulouse, France
  • fYear
    2012
  • fDate
    9-14 Sept. 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    ESD system level requirements imply design efforts to achieve fast and robust ESD structures. Several configurations of snapback bipolar ESD structures are tested with TLP measurement from 50ns up to 1us and gun results. Results demonstrate how its robustness depends on the current capability of stacked snapback bipolar structure configuration.
  • Keywords
    electrostatic discharge; transmission lines; TLP measurement; bipolar ESD structures; current capability; double stack; single stack; snapback behavior; snapback bipolar ESD structures; system level ESD performance; time 50 ns to 1 mus; transmission line pulse measurement; Current measurement; Electrostatic discharges; Hidden Markov models; Periodic structures; Pulse measurements; Robustness; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Print_ISBN
    978-1-4673-1467-1
  • Type

    conf

  • Filename
    6333337