DocumentCode
1841412
Title
Impact of snapback behavior on system level ESD performance with single and double stack of bipolar ESD structures
Author
Laine, Jean-Philippe ; Salles, Alain ; Besse, Patrice ; Delmas, Antoine
Author_Institution
Freescale Semicond., Toulouse, France
fYear
2012
fDate
9-14 Sept. 2012
Firstpage
1
Lastpage
5
Abstract
ESD system level requirements imply design efforts to achieve fast and robust ESD structures. Several configurations of snapback bipolar ESD structures are tested with TLP measurement from 50ns up to 1us and gun results. Results demonstrate how its robustness depends on the current capability of stacked snapback bipolar structure configuration.
Keywords
electrostatic discharge; transmission lines; TLP measurement; bipolar ESD structures; current capability; double stack; single stack; snapback behavior; snapback bipolar ESD structures; system level ESD performance; time 50 ns to 1 mus; transmission line pulse measurement; Current measurement; Electrostatic discharges; Hidden Markov models; Periodic structures; Pulse measurements; Robustness; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location
Tucson, AZ
ISSN
0739-5159
Print_ISBN
978-1-4673-1467-1
Type
conf
Filename
6333337
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