A new extraction method for effective channel length on lightly doped drain MOSFET´s

Author

Ida, Jiro ; Kita, Akio ; Ichikawa, Fumio

Author_Institution

Oki Electr. Ind. Co. Ltd., Hachioji, Japan

fYear

1990

fDate

5-7 March 1990

Firstpage

117

Lastpage

122

Abstract

An extraction method for an effective channel length (L/sub eff/) on lightly doped drain (LDD) MOSFETs is proposed. In the method, the L/sub eff/ is obtained by the linear extrapolation of the gate-bias-dependent L/sub eff/ to the threshold voltage. In order to clear the difference of the gate bias dependence of the L/sub eff/ among various LDD structures, the LDDs are examined with experiments and simulations. The L/sub eff/ of LDDs corresponds to the metallurgical length. It is shown that MOSFET parameters can be reasonably characterized when the L/sub eff/ obtained by the method is used.<>

Keywords

insulated gate field effect transistors; semiconductor device models; LDD MOSFETs; LDD structures; MOSFET parameters; channel length measurement; effective channel length; extraction method; gate bias dependence; lightly doped drain MOSFETs; linear extrapolation; metallurgical length; modeling parameter extraction; Electric resistance; Electric variables measurement; Electrical resistance measurement; Extrapolation; Length measurement; MOSFET circuits; Performance evaluation; Research and development; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/ICMTS.1990.67890

Filename

67890