Title :
ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling
Author :
Hellings, Geert ; Linten, Dimitri ; Thijs, Steven ; Chen, Shih-Hung ; Witters, Liesbeth ; Mitard, Jerome ; Zografos, Odysseas ; Groeseneken, Guido
Author_Institution :
Electr. Eng. Dept., K.U. Leuven, Leuven, Belgium
Abstract :
The next technology option to keep CMOS scaling on pace after the introduction of finFETs, is the use of High Mobility channels. For the first time, the ESD reliability of such a technology option is studied for pMOS devices using SiGe Quantum Well and Ge channels.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; electrostatic discharge; elemental semiconductors; germanium; semiconductor device reliability; semiconductor quantum wells; CMOS scaling; ESD characterization; ESD reliability; FinFET; Ge; SiGe; high mobility channels; high mobility quantum well; pMOS devices; Current measurement; Electrostatic discharges; Logic gates; Silicon; Silicon germanium; Stress; Voltage measurement;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-1467-1
