DocumentCode
1841735
Title
ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling
Author
Hellings, Geert ; Linten, Dimitri ; Thijs, Steven ; Chen, Shih-Hung ; Witters, Liesbeth ; Mitard, Jerome ; Zografos, Odysseas ; Groeseneken, Guido
Author_Institution
Electr. Eng. Dept., K.U. Leuven, Leuven, Belgium
fYear
2012
fDate
9-14 Sept. 2012
Firstpage
1
Lastpage
6
Abstract
The next technology option to keep CMOS scaling on pace after the introduction of finFETs, is the use of High Mobility channels. For the first time, the ESD reliability of such a technology option is studied for pMOS devices using SiGe Quantum Well and Ge channels.
Keywords
CMOS integrated circuits; Ge-Si alloys; MOSFET; electrostatic discharge; elemental semiconductors; germanium; semiconductor device reliability; semiconductor quantum wells; CMOS scaling; ESD characterization; ESD reliability; FinFET; Ge; SiGe; high mobility channels; high mobility quantum well; pMOS devices; Current measurement; Electrostatic discharges; Logic gates; Silicon; Silicon germanium; Stress; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location
Tucson, AZ
ISSN
0739-5159
Print_ISBN
978-1-4673-1467-1
Type
conf
Filename
6333355
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