• DocumentCode
    1841752
  • Title

    Exponential-enhanced characteristic of MOS transistors and its application to log-domain circuits

  • Author

    Fernández, Daniel ; Madrenas, Jordi ; Kapusta, Dominik ; Michalik, Piotr

  • Author_Institution
    Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    2334
  • Lastpage
    2337
  • Abstract
    In this paper we present a fully CMOS-compatible circuit that extends the weak-inversion exponential characteristic of a MOS transistor to seven decades of current. This circuit can be used to implement log-domain or translinear circuits up to the strong inversion region, allowing highly-accurate implementations of translinear loop functions and higher biasing currents (and potentially higher frequency operation) than MOS weak-inversion biased log-domain circuits.
  • Keywords
    CMOS integrated circuits; MOSFET; CMOS compatible circuit; MOS transistors; log-domain circuits; translinear circuits; translinear loop functions; weak inversion exponential; Application software; Bipolar transistors; CMOS process; Circuits; Diodes; Equations; Frequency; MOS devices; MOSFETs; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4541922
  • Filename
    4541922