DocumentCode
1841762
Title
Automated Large-Signal Load-Pull Characterization of Adjacent-Channel Power Ratio for Digital Wireless Communication Systems
Author
Sevic, John F. ; Baeten, Robert ; Simpson, Gary ; Steer, Michael B.
Author_Institution
Motorola SPS, Phoenix, AZ
Volume
28
fYear
1995
fDate
Nov. 1995
Firstpage
64
Lastpage
70
Abstract
Large-signal adjacent-channel power ratio load-pull contours of a GaAs MESFET and a GaAs HEMT excited by ¿4-DQPSK modulation are demonstrated for the first time using an automated load-pull system. It is shown that in general there is only a weak relationship between two-tone third-order intermodulation and adjacent-channel power ratio for the (Japanese) Personal Digital Cellular standard. The relationship is both load impedance and device technology dependent insofar as two-tone linearity characterization cannot generally be used to optimize adjacent-channel power. The load-pull system presented here is modulation and device technology independent.
Keywords
Gallium arsenide; HEMTs; Impedance; Linearity; MESFETs; Microwave transistors; Power generation; Power measurement; Power transistors; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest-Fall, 46th
Conference_Location
Scottsdale, AZ, USA
Print_ISBN
0-7803-5686-1
Type
conf
DOI
10.1109/ARFTG.1995.327134
Filename
4119812
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