Sampling circuit on silicon substrate for frequencies beyond 50 GHz

Author

Abele, P. ; Birk, M. ; Behammer, D. ; Kibbel, H. ; Trasser, A. ; Maier, P. ; Schad, K.-B. ; Sonmez, E. ; Schumacher, H.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1681

Abstract

We have fabricated and measured a sampling circuit on high resistivity silicon substrate. The circuit incorporates a nonlinear transmission line to provide the sampling pulses. The sampling circuit was measured up to 50 GHz, with a voltage conversion loss lower than 11 dB and varying in this range by just 2.3 dB. This is the first presentation of a sampling circuit on silicon substrate with a corner frequency beyond 50 GHz.

Keywords

elemental semiconductors; high-speed integrated circuits; microwave measurement; signal processing equipment; signal sampling; silicon; time-domain analysis; 11 dB; 50 GHz; Si; corner frequency; high resistivity substrate; high-speed switching circuits; nonlinear transmission lines; picosecond sampling pulses; sampling circuit; sampling pulses; temporal resolution; time-domain characterization; voltage conversion loss; Circuit testing; Distributed parameter circuits; Frequency; Gallium arsenide; Pulse circuits; Sampling methods; Schottky diodes; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012182

Filename

1012182