A 0.35-μm SiGe WCDMA direct conversion transmitter with DC offset compensation for carrier leakage reduction

Author

Su, Peneng-Un ; Chen, Yen-Homg ; Yang, Tzu-Yi

Author_Institution

SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2005

fDate

27-29 April 2005

Firstpage

149

Lastpage

152

Abstract

A direct conversion transmitter for WCDMA application is presented in this paper. The baseband DC offset voltage of this transmitter is adjustable, such that carrier leakage power at the quadrature modulator output can be minimized. With this adjustable DC offset voltage, gain control with large dynamic range can be distributed in baseband to implement accurate gain control. An auto-calibration algorithm is also implemented in the baseband filter to adjust its cutoff frequency to 3.2MHz. The current consumption of the transmitter is only 46.4mA under 2.7V power supply and can be further reduced at smaller output power. The measured EVM performance is 1.2% at maximum output power.

Keywords

Ge-Si alloys; code division multiple access; gain control; leakage currents; radio transmitters; radiofrequency integrated circuits; 0.35 micron; 2.7 V; 3.2 MHz; 46.4 mA; DC offset compensation; DC offset voltage; SiGe; WCDMA; auto-calibration algorithm; baseband filter; carrier leakage reduction; direct conversion transmitter; gain control; quadrature modulator; Baseband; Dynamic range; Filters; Gain control; Germanium silicon alloys; Multiaccess communication; Power generation; Silicon germanium; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test, 2005. (VLSI-TSA-DAT). 2005 IEEE VLSI-TSA International Symposium on

Print_ISBN

0-7803-9060-1

Type

conf

DOI

10.1109/VDAT.2005.1500042

Filename

1500042