A high linearity low noise amplifier in a 0.35μm SiGe BiCMOS for WCDMA applications

Author

Wang, Chih-Wei ; Lee, Yi-Bin ; Yang, Tm-Yi

Author_Institution

SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2005

fDate

27-29 April 2005

Firstpage

153

Lastpage

156

Abstract

In this paper, a low noise amplifier (LNA) in a 0.35 μm SiGe BiCMOS technology for WCDMA applications is presented. The designed LNA exhibits a noise figure of 1.65 dB and a power gain of 20 dB. Besides, two different base bias circuits are integrated in the LNA. One is a conventional resistor feed circuit, and the other is an active feed circuit. By using the active biasing technique for the base of the HBT, the 1-dB compression point (P1dB) can be extended. Compared with the resistor feed circuit, more than 8 dB improvement in P1dB is achieved with the active feed circuit. The measured input P1dB and IP3 arc -12.3 dBm and -0.5 dBm, respectively. This LNA is packaged in a QFN package and dissipates 6.4 mA from a 2.7 V supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; code division multiple access; 0.35 micron; 1.65 dB; 2.7 V; 20 dB; 6.4 mA; BiCMOS technology; HBT; P1dB; QFN package; SiGe; WCDMA; active biasing technique; active feed circuit; bias circuits; low noise amplifier; resistor feed circuit; BiCMOS integrated circuits; Feeds; Germanium silicon alloys; Integrated circuit technology; Linearity; Low-noise amplifiers; Multiaccess communication; Packaging; Resistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test, 2005. (VLSI-TSA-DAT). 2005 IEEE VLSI-TSA International Symposium on

Print_ISBN

0-7803-9060-1

Type

conf

DOI

10.1109/VDAT.2005.1500043

Filename

1500043