Title :
An ultra-broadband low-noise traveling-wave amplifier based on 50nm InGaAs mHEMT technology
Author :
Zech, C. ; Diebold, S. ; Wagner, S. ; Schlechtweg, M. ; Leuther, A. ; Ambacher, O. ; Kallfass, I.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg im Breisgau, Germany
Abstract :
A monolithic integrated eight-stage traveling-wave amplifier (TWA) is presented that has been developed and fabricated using a 50nm InGaAs metamorphic HEMT technology. High-impedance coplanar waveguides (CPW) are used as compensation for the input and output capacitances of the stages, consisting of two transistors in a cascode configuration. A small signal gain of 11dB with a ripple of around ±1dB and a 3dB bandwidth of more than 110GHz is achieved. The noise figure (NF) is as low as 2.5dB at the best and less than 5dB for frequencies up to 90GHz. Furthermore, the amplifier provides an 1-dB-compression-point of 7dBm and a saturated output power of about 11dBm at 75GHz.
Keywords :
gallium arsenide; high electron mobility transistors; travelling wave amplifiers; InGaAs; cascode configuration; frequency 75 GHz; gain 11 dB; high-impedance coplanar waveguides; mHEMT technology; metamorphic HEMT technology; monolithic integrated eight-stage traveling-wave amplifier; noise figure; size 50 mm; ultra-broadband low-noise traveling-wave amplifier; Broadband amplifiers; Layout; GaAs; MMIC; distributed amplifier; low-noise; mHEMT; traveling-wave amplifier; ultra-broadband;
Conference_Titel :
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location :
Ilmenau
Print_ISBN :
978-1-4577-2096-3
Electronic_ISBN :
978-3-9812668-4-9
