• DocumentCode
    1842509
  • Title

    Measurement and Modeling of Picosecond Step Response of GaAs MESFETs

  • Author

    Law, Christine S. ; Vendelin, George D. ; Van der Weide, Daniel W.

  • Author_Institution
    Santa Clara University, Santa Clara, CA 95053
  • Volume
    29
  • fYear
    1996
  • fDate
    35217
  • Firstpage
    160
  • Lastpage
    163
  • Abstract
    The step response of a GaAs MESFET was measured using three techniques. The results were then compared with HP MDS using two nonlinear device models (EEFET3 and Statz-Pucel). Small and large signal TDT measurements give 15 - 50 ps switching times with a small bias dependence, increasing with drain current.
  • Keywords
    Application software; Current measurement; Gallium arsenide; MESFETs; Measurement techniques; Oscilloscopes; Power system transients; Sampling methods; Time domain analysis; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ARFTG Conference Digest-Spring, 47th
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-5686-1
  • Type

    conf

  • DOI
    10.1109/ARFTG.1996.327177
  • Filename
    4119849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1842509