A modular hybrid switching amplifier for wide-bandwidth supply-modulated RF power amplifiers

Author

Perea-Tamayo, Robert ; Bengtsson, Olof ; Landin, Per N. ; Heinrich, Wolfgang

Author_Institution

Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst. (FBH), Berlin, Germany

fYear

2012

fDate

12-14 March 2012

Firstpage

1

Lastpage

4

Abstract

A modular hybrid switching amplifier (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V supply voltage, 1 A supply current and 10 MHz bandwidth. The purpose is to compare alternative switch technologies. A case study is conducted on GaN-HEMT and Si-MOSFET, which are compared with regards to efficiency and linearity under different load conditions, based on simulations and on measurements of the fabricated designs. Design modifications to accommodate the alternative switch technologies are presented together with analysis of non-linearities including slew-rate induced amplitude distortion.

Keywords

III-V semiconductors; UHF power amplifiers; elemental semiconductors; field effect transistor switches; gallium compounds; microwave switches; silicon compounds; wide band gap semiconductors; GaN; HEMT; MOSFET; Si; alternative switch technology; bandwidth 10 MHz; current 1 A; modular hybrid switching amplifier; slew-rate induced amplitude distortion; supply modulated RF power amplifier; voltage 15 V; widebandwidth RF power amplifier; Current measurement; Gallium nitride; Power amplifiers; Power demand; Switches; Switching circuits; Transistors; EER; Envelope tracking; hybrid switching amplifiers; power amplifiers; supply modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (GeMiC), 2012 The 7th German

Conference_Location

Ilmenau

Print_ISBN

978-1-4577-2096-3

Electronic_ISBN

978-3-9812668-4-9

Type

conf

Filename

6185190