Broadband thermoelectric microwave power sensors using GaAs foundry process

Author

Dehe, A. ; Fricke-Neuderth, K. ; Krozer, V.

Author_Institution

Technol. AG, Munich, Germany

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1829

Abstract

The paper presents the first demonstration of an integrated MMIC compatible thermoelectric microwave power sensor for frequencies between 1 to 20 GHz using a standard GaAs foundry process. Two different types of sensors are described: an insertion sensor for the measurement of transmitted power through a coplanar waveguide and a termination sensor which measures the power dissipated in a 50 /spl Omega/ load. The transmission sensor has a very low insertion loss of less than 0.3 dB and VSWR lower than 1.2. Due to their low time constant of approximately 1 /spl mu/s, these sensors are well suited for pulsed applications. The sensor exhibits an inherent linearity for large power levels and does not require any bias.

Keywords

III-V semiconductors; MMIC; coplanar waveguide components; electric sensing devices; gallium arsenide; losses; microwave detectors; microwave measurement; power measurement; thermoelectric devices; 0.3 dB; 1 mus; 1 to 20 GHz; 50 ohm; GaAs; GaAs foundry process; VSWR; broadband thermoelectric microwave power sensors; coplanar waveguide; dissipated power; insertion loss; insertion sensor; integrated MMIC compatible thermoelectric microwave power sensor; power levels; pulsed applications; sensor linearity; standard foundry process; termination sensor; time constant; transmitted power measurement; Coplanar waveguides; Foundries; Frequency; Gallium arsenide; MMICs; Microwave sensors; Power measurement; Sensor phenomena and characterization; Thermal sensors; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012218

Filename

1012218