A study of the effect of envelope impedance on intermodulation asymmetry using a two-tone time domain measurement system

Author

Williams, D.J. ; Leckey, J. ; Tasker, P.J.

Author_Institution

Cardiff Sch. of Eng., Cardiff Univ., UK

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1841

Abstract

An error corrected two-tone time domain measurement system has been developed and combined with a low frequency active source and load-pull system to investigate the effects of all impedance terminations, IF and RF, on the linearity and efficiency of power transistors. Measured data is presented on a HBT biased in class B stimulated by-a two-tone signal while actively load pulling the low frequency IF component.

Keywords

electric impedance; heterojunction bipolar transistors; intermodulation; microwave measurement; power bipolar transistors; semiconductor device measurement; HBT; IF impedance termination; RF impedance termination; class-B operation; efficiency; envelope impedance; error correction; intermodulation asymmetry; linearity; load-pull system; low-frequency active source; power transistor; two-tone time domain measurement system; Calibration; Current measurement; Distortion measurement; Frequency measurement; Impedance; Linearity; Oscilloscopes; Power measurement; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012221

Filename

1012221