Title :
An analysis of source connections in GaN power transistor packages
Author :
Schnieder, Frank ; Schmückle, Franz-Josef ; Heinrich, Wolfgang ; Rudolph, Matthias
Author_Institution :
Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
This paper presents an analysis of different variations to contact the source of GaN power transistors in a package. Two variants relying on bondwires, and three variations using source vias are considered. Based on em simulations, equivalent circuits are determined for the package, which enables detailed analysis of cause and effect in the overall package performance. The focus of the investigation lies on the mutual inductive coupling, that shows to be a dominant effect. It is also shown that positive feedback might be used to partially compensate the undesired source inductance.
Keywords :
III-V semiconductors; electronics packaging; equivalent circuits; gallium compounds; power transistors; semiconductor device models; wide band gap semiconductors; EM simulation; GaN; GaN power transistor package; bondwires; equivalent circuit; mutual inductive coupling; source connection; source inductance; source vias; Couplings; Inductance; Logic gates; Microwave theory and techniques; Mutual coupling; Power transistors; Transistors; MODFETs; power transistors; semiconductor device modeling; semiconductor device packaging;
Conference_Titel :
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location :
Ilmenau
Print_ISBN :
978-1-4577-2096-3
Electronic_ISBN :
978-3-9812668-4-9
