Title :
A comparison of power amplifiers in two generations of SiGe:C technologies
Author :
Hamidipour, Abouzar ; Jahn, Martin ; Meister, Thomas F. ; Aufinger, Klaus ; Stelzer, Andreas
Author_Institution :
Inst. for Commun. Eng. & RF-Syst., Univ. of Linz, Linz, Austria
Abstract :
This paper investigates the performance of two differential power amplifiers that were designed for automotive radar applications at 79 GHz and fabricated in two different SiGe:C processes. One process is Infineon´s high-speed SiGe:C commercial process B7HF200, and the other one is an advanced generation derived from it. They provide heterojunction bipolar transistors with maximum oscillation frequencies of 250 and 380 GHz, respectively. The performance of the two amplifiers is compared in terms of linearity, maximum saturated output power, power gain, power added efficiency and temperature stability.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; road vehicle radar; submillimetre wave amplifiers; submillimetre wave transistors; Inflneon´s high-speed commercial process B7HF200; SiGe:C; automotive radar application; differential power amplifier; frequency 250 GHz to 380 GHz; frequency 79 GHz; heterojunction bipolar transistor; maximum oscillation frequency; maximum saturated output power; power added efficiency; power gain; temperature stability; Automotive engineering; Gain; Impedance matching; Power generation; Silicon germanium; Temperature measurement; Thermal stability; Power amplifiers; heterojunction bipolar transistors (HBTs); power added efficiency; power consumption; power gain; temperature stability;
Conference_Titel :
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location :
Ilmenau
Print_ISBN :
978-1-4577-2096-3
Electronic_ISBN :
978-3-9812668-4-9
