DocumentCode
1843033
Title
A micromachined finite coplanar line-to-silicon micromachined waveguide transition for millimeter and submillimeter wave applications
Author
Yongshik Lee ; Becker, J.P. ; East, J.R. ; Katehi, L.P.B.
Author_Institution
Radiat. Lab., Michigan Univ., Ann Arbor, MI, USA
Volume
3
fYear
2002
fDate
2-7 June 2002
Firstpage
1871
Abstract
A finite ground coplanar (FGC) line-to-waveguide transition utilizing a novel, free-standing printed E-plane probe has been demonstrated in W-band (75-110 GHz). One way to improve the performance of such a transition and to extend its utility well into the submillimeter range is to thin the supporting substrate beneath the probe. This paper presents the W-band performance of a fully micromachined finite ground coplanar line-to-silicon diamond waveguide transition with the substrate beneath the probe entirely removed, thus forming a free-standing metal structure.
Keywords
coplanar waveguides; micromachining; rectangular waveguides; waveguide transitions; 75 to 110 GHz; Si; W-band performance; finite ground coplanar line-to-waveguide transition; free-standing metal structure; free-standing printed E-plane probe; micromachined finite coplanar line-to-silicon micromachined waveguide transition; millimeter wave applications; silicon micromachined diamond waveguide; submillimeter range; supporting substrate thinning; Coplanar waveguides; Electromagnetic waveguides; Frequency; Insertion loss; Permittivity; Probes; Rectangular waveguides; Silicon; Transmission line theory; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1012228
Filename
1012228
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