DocumentCode
1843228
Title
A high-gain X-band GaN-MMIC power amplifier
Author
Ersoy, Erhan ; Meliani, Chafik ; Chevtchenko, Serguei ; Kurpas, Paul ; Matalla, Mathias ; Heinrich, Wolfgang
Author_Institution
Ferdinand-Braun-Inst. (FBH), Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
fYear
2012
fDate
12-14 March 2012
Firstpage
1
Lastpage
4
Abstract
In this paper, a high-gain X-band MMIC power amplifier is presented. The amplifier is based on 0.25μm-gate GaN HEMTs and realized as coplanar circuit using the 4-inch process line at FBH. The circuit delivers almost 9 W output power at 10 GHz, with final stage drain efficiency of 32%.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; HEMT; coplanar circuit; final stage drain efficiency; frequency 10 GHz; high-gain X-band MMIC power amplifier; output power; size 0.25 mum; Gain; Gallium nitride; Impedance; Logic gates; MODFETs; Power amplifiers; CPW; Gallium nitride; X-band; power amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location
Ilmenau
Print_ISBN
978-1-4577-2096-3
Electronic_ISBN
978-3-9812668-4-9
Type
conf
Filename
6185209
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