An experimentally verified IGBT model implemented in the Saber circuit simulator

Author

Hefner, Allen R., Jr. ; Diebolt, Daniel M.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1991

fDate

24-27 Jun 1991

Firstpage

10

Lastpage

19

Abstract

A physics-based insulated gate bipolar transistor (IGBT) model is implemented in the general-purpose circuit simulator Saber. The IGBT model includes all of the physical effects that have been shown to be important for describing IGBTs, and the model is valid for general external circuit conditions. The Saber IGBT model is evaluated for the range of static and dynamic conditions in which the device is intended to be operated, and the simulations compare well with experimental results for all of the conditions studied

Keywords

digital simulation; insulated gate bipolar transistors; semiconductor device models; IGBT; Saber circuit simulator; dynamic conditions; external circuit conditions; insulated gate bipolar transistor; static conditions; Bipolar transistors; Capacitance; Circuit simulation; Current supplies; Epitaxial layers; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Microelectronics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1991. PESC '91 Record., 22nd Annual IEEE

Conference_Location

Cambridge, MA

Print_ISBN

0-7803-0090-4

Type

conf

DOI

10.1109/PESC.1991.162645

Filename

162645