A novel planar silicon waveguide filter at 45 GHz based on a periodic structure

Author

Lenoir, B. ; Blondy, P. ; Baillargeat, D. ; Verdeyme, S. ; Guillon, P. ; Zheng, E. ; Tavernier, C. ; Papapolymerou, P.

Author_Institution

Inst. de Recherche en Commun. Opt. et Microondes, CNRS, Limoges, France

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1923

Abstract

A novel planar silicon waveguide two-pole filter at 45 GHz with a 2.5% equiripple bandwidth is described in this paper. This filter is comprised of a periodic structure of holes that form coupled silicon resonators. We first describe the geometrical, physical and electrical characteristics of the periodic structure, the silicon resonator and the CPW I/O ports applying the Finite Element Method (FEM). Then a two-pole filter was designed and simulated at the IRCOM, and fabricated at the Georgia Institute of Technology. Measurements are presented.

Keywords

Chebyshev filters; band-pass filters; elemental semiconductors; finite element analysis; micromachining; millimetre wave filters; passive filters; periodic structures; resonator filters; silicon; waveguide filters; 45 GHz; CPW I/O ports; FEM; Si; coupled silicon resonators; electrical characteristics; finite element method; geometrical characteristics; periodic structure; planar two-pole filter; planar waveguide filter; Coplanar waveguides; Dielectric substrates; Electromagnetic propagation; Electromagnetic waveguides; Filters; Finite element methods; Frequency; Periodic structures; Planar waveguides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012240

Filename

1012240