Title :
Conduction, reverse conduction and switching characteristics of GaN E-HEMT
Author :
Sorensen, Charlie ; Fogsgaard, Martin Lindblad ; Christiansen, Michael Noe ; Graungaard, Mads Kjeldal ; Norgaard, Jacob Bitcsh ; Uhrenfeldt, Christian ; Trintis, Ionut
Author_Institution :
Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
Abstract :
In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curvetracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth-Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power semiconductor devices; wide band gap semiconductors; E-HEMT; GaN; double pulse test; enhancement mode gallium nitride transistor; forward conduction; parasitic impedance; reverse conduction; switching characteristics; voltage drop; Current measurement; Gallium nitride; Inductance; Logic gates; Loss measurement; Multichip modules; Transistors; Current-voltage characteristics; DC-AC power converters; Gallium nitride; HEMTs; Loss measurements; Pulse width modulation converters; Switching loss; Transistors;
Conference_Titel :
Power Electronics for Distributed Generation Systems (PEDG), 2015 IEEE 6th International Symposium on
Conference_Location :
Aachen
DOI :
10.1109/PEDG.2015.7223051
