Film Characterization of Cu diffusion barrier dielectrics for 90 nm and 65 nm technology node Cu interconnects

Author

Goto, Kinya ; Yuasa, Hiroshi ; Andatsu, Akira ; Matsuura, Masazumi

Author_Institution

ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2003

fDate

2-4 June 2003

Firstpage

6

Lastpage

8

Abstract

This paper describes film characterization of Cu diffusion barrier SiC, SiCN and SiCO in detail. Although SiCN and SiCO achieve reduced leakage current and k-value, the biggest challenge is to achieve robust stability in film stress and k value because undesirable N and O doping cause increased film stress and k value after deposition. Fine-tuned SiC makes it possible to greatly reduce leakage current and k value to 3.9. From Bias Temperature Stress (BTS) measurement, our desired SiCN, SiCO and fine-tuned SiC are assured in 10-year durability to electrical Cu diffusion.

Keywords

CVD coatings; carbon compounds; copper; dielectric materials; dielectric thin films; diffusion barriers; interconnections; internal stresses; leakage currents; permittivity; silicon compounds; 65 nm; 90 nm; Cu diffusion barrier dielectrics; Cu interconnects; N-O doping; SiC films; SiC-Cu; SiCN films; SiCN-Cu; SiCO films; SiCO-Cu; bias temperature stress; electrical Cu diffusion; film characterization; film stress; leakage current; robust stability; Current measurement; Dielectric measurements; Leakage current; Plasma temperature; Semiconductor films; Silicon carbide; Spectroscopy; Stress; Temperature measurement; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219696

Filename

1219696