• DocumentCode
    1844109
  • Title

    Influence of dielectric layers on electromigration results in Cu interconnects

  • Author

    Arnaud, Laurent ; Guillaumond, J.F. ; Pesci, O. ; Fayolle, M. ; Reimbold, G.

  • Author_Institution
    CEA-LETI, Grenoble, France
  • fYear
    2003
  • fDate
    2-4 June 2003
  • Firstpage
    30
  • Lastpage
    32
  • Abstract
    Electromigration studies showed that an activation energy Ea∼0.9 eV was obtained in Cu interconnects with SiOC as lateral dielectric for linewidths down to 0.28 μm. Failure analysis showed similar EM diffusion path in Cu/SiOC interconnects in comparison to Cu/SiO2 interconnects. Moreover electromigration lifetime is improved when a SiC cap layer is used: lifetime is increased in 0.4 μm by a factor of 4 in comparison to SiN cap layer.
  • Keywords
    copper; diffusion; electromigration; failure analysis; integrated circuit interconnections; silicon compounds; Cu interconnects; Cu-SiOC; Cu-SiOC interconnects; EM diffusion path; SiC; SiC cap layer; dielectric layers; electromigration lifetime; failure analysis; linewidths; Copper; Dielectric constant; Electromigration; Integrated circuit interconnections; Microstructure; Monitoring; Silicon carbide; Silicon compounds; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
  • Print_ISBN
    0-7803-7797-4
  • Type

    conf

  • DOI
    10.1109/IITC.2003.1219703
  • Filename
    1219703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1844109