Electrothermal modeling of multi-fingered PHEMTs applying a global approach

Author

Byk, E. ; Lopez, D. ; Baillargeat, D. ; Verdeyme, S. ; Quere, R. ; Sommet, R. ; Guillon, P. ; Laporte, E. ; Soulard, M.

Author_Institution

IRCOM-UMR, CNRS, Limoges, France

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

2085

Abstract

In this paper, a global method is proposed to characterize the electrothermal behavior of multi-fingered Pseudomorphic High Electron-Mobility Transistors (PHEMTs). The method is based on the coupling of circuit, electromagnetic and thermal softwares. It is shown that scaling rules have just to be applied for intrinsic performances of a transistor when extrinsic elements and thermal effects are rigorously taken into account.

Keywords

electronic engineering computing; finite element analysis; high electron mobility transistors; method of moments; microwave field effect transistors; semiconductor device models; thermal analysis; 2 to 40 GHz; 2.5D simulator; 3D simulator; Agilent Momentum; FEM; MoM; electrothermal modeling; finite element method; global method; high electron-mobility transistors; large signal model; multi-fingered PHEMTs; pseudomorphic HEMTs; scaling rules; thermal effects; Aerospace industry; Circuit simulation; Computational modeling; Coupling circuits; Electromagnetic coupling; Electromagnetic heating; Electromagnetic modeling; Electrothermal effects; PHEMTs; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012280

Filename

1012280