A novel circular structure for the extraction of the contact resistivity-application to the Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si and TiN/Ti/p/sup +/Si interfaces

Author

Scorzoni, Andrea ; Vanzi, Massimo ; Caprile, Candida

Author_Institution

CNR, Bologna, Italy

fYear

1990

fDate

5-7 March 1990

Firstpage

233

Lastpage

236

Abstract

A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.<>

Keywords

contact resistance; electrical conductivity measurement; integrated circuit technology; ohmic contacts; palladium compounds; semiconductor-metal boundaries; titanium compounds; Pd/sub 2/Si-Si; Pd/sub 2/Si-n/sup +/Si contacts; TiN-Ti-Si; TiN-Ti-n/sup +/Si contacts; TiN-Ti-p/sup +/Si contacts; VLSI contacts; analytical form; circular resistor; circular structure; contact resistance; contact resistivity extraction; extracting metal-semiconductor contact resistivity; metal semiconductor contacts; ohmic contacts; silicides; test structures; Boundary conditions; Chromium; Circuit testing; Conductivity; Contact resistance; Equations; Geometry; Kelvin; Resistors; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/ICMTS.1990.67909

Filename

67909