Title :
Effects of templating byproducts on adhesion of nanoporous dielectric films
Author :
Maidenberg, Dan ; Volksen, Willi ; Miller, Robert ; Dauskardt, Reinhold
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
Abstract :
Dielectric films (methylsilsesquioxane) with induced porosity were prepared and tested for their adhesion to metal and SiO2 interfaces. Fracture mechanics techniques were employed to produce quantifiable and reproducible data without the confounding effects of residual stress relaxation. The effect of porosity on adhesion was shown to depend strongly on which interface was being measured. Remarkable increases in adhesion at the SiO2 interface have been attributed to molecular bridging mechanisms activated by remnants of the pore-creating molecules.
Keywords :
adhesion; dielectric materials; dielectric thin films; nanoporous materials; organic compounds; porosity; silicon compounds; stress relaxation; SiO2; adhesion; metal-SiO2 interfaces; methylsilsesquioxane; molecular bridging mechanisms; nanoporous dielectric films; pore-creating molecules; porosity; residual stress relaxation; Adhesives; Biological materials; Dielectric films; Dielectric materials; Dielectric thin films; Nanoporous materials; Residual stresses; Silicon; Strain measurement; Surface cracks;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219709
