Avoiding reverse recovery effects in super junction MOSFET based half-bridges

Author

Conrad, Marcus ; DeDoncker, Rik W.

Author_Institution

Inst. for Power Electron. & Electr. Drives, RWTH Aachen Univ., Aachen, Germany

fYear

2015

fDate

22-25 June 2015

Firstpage

1

Lastpage

5

Abstract

For applications with a dc-link voltage in the range of 400 V and high switching frequencies, Super Junction MOSFETs are superior to standard MOSFETs due to their low on-state resistance. However, they suffer from an extensive reverse recovery effect of their intrinsic body diode. This limits their usage in hard-switching half-bridge configurations. This paper analyzes a modified half-bridge based on Super Junction MOSFETs, which offers significantly reduced reverse recovery losses while maintaining current conduction in reverse direction through the Super Junction MOSFET. Hence, the application of Super Junction MOSFETs in hard switched topologies becomes possible. Measurements of relevant voltage and current waveforms as well as the thermal distribution show the efficiency of the proposed method.

Keywords

MOSFET; bridge circuits; junction gate field effect transistors; network topology; switching convertors; voltage measurement; current conduction; reverse recovery effect avoidance; super junction MOSFET based hard switching half bridge configuration; thermal distribution; voltage measurement; Capacitance; Current measurement; Inductance; MOSFET; Schottky diodes; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics for Distributed Generation Systems (PEDG), 2015 IEEE 6th International Symposium on

Conference_Location

Aachen

Type

conf

DOI

10.1109/PEDG.2015.7223083

Filename

7223083