A highly reliable nano-clustering silica with low dielectric constant (k<2.3) and high elastic modulus (E=10 GPa) for copper damascene process

Author

Ikeda, Masanobu ; Nakahira, Junya ; Iba, Yoshihisa ; Kitada, Hideki ; Nishikawa, Nobuyuki ; Miyajima, Motoshu ; Fukuyama, Shun-ichi ; Shimizu, Noriyoshi ; Ikeda, Kazuto ; Ohba, Takayuki ; Sugiura, Iwao ; Suzuki, Katsumi ; Nakata, Yoshihiro ; Doi, Shuichi

Author_Institution

Akiruno Technol. Center, Fujitsu Ltd., Tokyo, Japan

fYear

2003

fDate

2-4 June 2003

Firstpage

71

Lastpage

73

Abstract

A highly reliable nano-clustering silica (NCS) with low dielectric constant(k<2.3) and high elastic modulus (E=10 Gpa) for copper damascene process has been developed by controlling the size and distribution of pores in the NCS precursor. Using this material in a process compatible with the 90 nm technology node, we successfully demonstrated Cu wiring in NCS dielectrics.

Keywords

copper; elastic moduli; integrated circuit interconnections; nanoporous materials; permittivity; silicon compounds; wiring; 90 nm; Cu; Cu wiring; SiO₂; copper damascene process; dielectric constant; elastic modulus; nanoclustering silica; pores; Conducting materials; Copper; Dielectric constant; Dielectric materials; Dielectric measurements; Mechanical factors; Organic materials; Silicon compounds; Wiring; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219716

Filename

1219716