Title :
Completely consistent ´no-charge´ PHEMT model including DC/RF dispersion
Author :
Wei, C.J. ; Tkachenko, Y.A. ; Gering, J. ; Bartle, D.
Author_Institution :
Alpha Industries Inc., Woburn, MA, USA
Abstract :
A new large-signal PHEMT model based on independent fitting of DC currents, RF currents, and capacitances is developed. Unlike conventional models, it does not contain charge terms and therefore, avoids the problem of path-dependence in the charge-integration of capacitances. Similar consideration is given to the dispersion of conductances. Since each nonlinear element of the model corresponds to an element of the small-signal equivalent circuit, the model shows complete consistency over the bias range of the model´s extraction. The model features accuracy. and simplicity of extraction. It is especially useful for PHEMTs or MESFETs with dispersion.
Keywords :
Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; DC currents; DC dispersion; FETs; MESFET model; PHEMT model; RF currents; RF dispersion; bias range; capacitances; dispersion effects; equivalent circuit model; large-signal model; model extraction; Capacitance; Current measurement; Equivalent circuits; FETs; Feature extraction; Fitting; PHEMTs; Radio frequency; Scattering parameters; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012292
