Completely consistent ´no-charge´ PHEMT model including DC/RF dispersion

Author

Wei, C.J. ; Tkachenko, Y.A. ; Gering, J. ; Bartle, D.

Author_Institution

Alpha Industries Inc., Woburn, MA, USA

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

2133

Abstract

A new large-signal PHEMT model based on independent fitting of DC currents, RF currents, and capacitances is developed. Unlike conventional models, it does not contain charge terms and therefore, avoids the problem of path-dependence in the charge-integration of capacitances. Similar consideration is given to the dispersion of conductances. Since each nonlinear element of the model corresponds to an element of the small-signal equivalent circuit, the model shows complete consistency over the bias range of the model´s extraction. The model features accuracy. and simplicity of extraction. It is especially useful for PHEMTs or MESFETs with dispersion.

Keywords

Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; DC currents; DC dispersion; FETs; MESFET model; PHEMT model; RF currents; RF dispersion; bias range; capacitances; dispersion effects; equivalent circuit model; large-signal model; model extraction; Capacitance; Current measurement; Equivalent circuits; FETs; Feature extraction; Fitting; PHEMTs; Radio frequency; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012292

Filename

1012292