DocumentCode
1844576
Title
An empirical HBT Large Signal Model for CAD
Author
Angelov, I. ; Choumei, K. ; Inoue, A.
Author_Institution
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
3
fYear
2002
fDate
2-7 June 2002
Firstpage
2137
Abstract
Extensive measurements were performed at different temperatures on GaAs HBT´s in order to obtain a simple Large Signal Model usable in CAD. The model was experimentally evaluated by DC, S and Power Spectrum measurements and good correspondence was obtained between measurements and experiment.
Keywords
CAD; III-V semiconductors; S-parameters; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; CAD; DC measurements; GaAs; GaAs HBT; S-parameter measurements; large-signal model; power spectrum measurements; Design automation; Equivalent circuits; Heterojunction bipolar transistors; Performance evaluation; Physics; Power measurement; Semiconductor diodes; Temperature; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1012293
Filename
1012293
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