Title :
Effect of CMP slurry environments on subcritical crack growth in ultra low-k dielectric materials
Author :
Guyer, Eric P. ; Dauskardt, Reinhold H.
Author_Institution :
Dept. of Mater. Sci. and Eng., Stanford Univ., CA, USA
Abstract :
The success of next generation interconnects relies to a large degree on the integration of low-k dielectric (LKD) materials capable of surviving chemical mechanical planarization (CMP). However, little is currently understood about the effect CMP slurry environments have on the reliability of these advanced dielectrics. Accordingly, the focus of this research was to characterize and model the effect of CMP solution chemistry on adhesion and subcritical debond growth in thin-film structures containing LKD materials for future generation devices.
Keywords :
adhesion; chemical mechanical polishing; cracks; dielectric thin films; integrated circuit interconnections; metallisation; permittivity; planarisation; slurries; CMP slurry environments; CMP solution chemistry; adhesion; chemical mechanical planarization; crack growth; dielectric materials; interconnects; subcritical debond growth; thin-film structures; Acceleration; Adhesives; Chemicals; Chemistry; Dielectric materials; Dielectric substrates; Dielectric thin films; Glass; Slurries; Testing;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219721
