A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects

Author

Taeho Kim ; Kyounghoon Yang

Author_Institution

Dept. of EECS, Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

2141

Abstract

A new large-signal model of InP/InGaAs single heterojunction bipolar transistors (SHBTs) has been developed which includes self-heating and impact ionization effects. The model is based on the conventional Gummel-Poon large-signal BJT model. The self-heating and impact ionization effects observed from InP-based SRBTs were modeled through a macro modeling approach. In order to take into account the dependence of impact ionization on the applied voltage and thermal effect, a feedback current source and a temperature dependent voltage source were used in the model as a function of junction temperature, I/sub C/ and V/sub CB/. The model implemented in HP-ADS is verified by comparing the simulated and measured data in DC, multi-bias small-signal S-parameters and large-signal microwave power characteristics.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; impact ionisation; indium compounds; semiconductor device models; Gummel-Poon model; HP-ADS; InP-InGaAs; InP/InGaAs single heterojunction bipolar transistor; impact ionization; large-signal model; macromodel; self-heating; Feedback; Heterojunction bipolar transistors; Impact ionization; Indium gallium arsenide; Indium phosphide; Microwave measurements; Power measurement; Scattering parameters; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012294

Filename

1012294