Title :
Characteristics of ALD-TaN thin films using a novel precursors for copper metallization
Author :
Kyung In Choi ; Byung Hee Kim ; Sang Woo Lee ; Jong Myeong Lee
Author_Institution :
Semicond. R&D, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
ALD-TaN thin films derived from tert-buthyIimidotrisdiethyl-amidotantalum (TBTDET) and tert-amylimidotrisdim-ethylamidotantalum (TAIMATA) precursors for the diffusion barrier in Cu interconnects were developed. The deposition rate of the ALD-TaN process was saturated at 0.4 Å /cycle in a temperature range between 200°C and 250°C with TBTDET and at 0.2 Å/cycle in a temperature range between 150°C and 200°C with TAIMATA. Both precursors provided roughly comparable film properties such as not only excellent conformality but also composition and structure characterized by XPS and XRD, respectively. ALD-TaN films obtained from above precursors yield low via resistance in aluminum interconnects. However, relatively high via resistance was resulted upon Cu integration as compared to PVD-TaN and Al metallization. The superior diffusion barrier characteristic on Cu metallization was observed with ALD-TaN by BTS result in comparison to the conventional PVD-TaN.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; atomic layer deposition; copper; diffusion barriers; integrated circuit metallisation; tantalum compounds; thin films; 150 to 250 degC; ALD-TaN thin films; Cu; Cu integration; Cu interconnects; TaN; XPS; XRD; aluminum interconnects; copper metallization; deposition rate; superior diffusion barrier; Artificial intelligence; Copper; Integrated circuit interconnections; Metallization; Semiconductor thin films; Sputtering; Temperature dependence; Temperature distribution; Transistors; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219732
