Analysis of resistivity in nano-interconnect: full range (4.2-300 K) temperature characterization

Author

Guillaumond, J.F. ; Arnaud, Laurent ; Mourie, T. ; Fayolle, M. ; Pesci, O. ; Reimbold, G.

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

2003

fDate

2-4 June 2003

Firstpage

132

Lastpage

134

Abstract

The characterisation of the damascene copper line resistivity as a function of linewidth and temperature were carried out for sub 100 nm feature size and down to 4.2 K. Mayadas model for grain boundary and sidewall scattering was used to analyse experimental data. The model is found to be in good agreement with experiment. The difficulty to isolate the different electron scattering mechanisms is highlighted. However. all the results show clearly that ITRS roadmap present requirement will not be respected in a close future.

Keywords

copper; electrical resistivity; grain boundaries; integrated circuit interconnections; nanotechnology; 100 nm; 523 to 4.2 K; Cu; Mayadas model; damascene copper; damascene copper line resistivity; electrical resistivity; electron scattering; grain boundary; nanointerconnect; Conductivity; Copper; Data analysis; Electrical resistance measurement; Electronic mail; Electrons; Grain boundaries; MOCVD; Scattering parameters; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219733

Filename

1219733