Title :
The improved CVD-Al metallization for deep small contact filling using selective wetting process
Author :
Seo, Jung Hun ; Kim, Byung Hee ; Lee, Jong Myeong ; Park, Hee Sook ; Yun, Ju-Young ; Rah, Young Seop ; Choi, Gil Heyun ; Chung, U. In ; Moon, Joo-Tae
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
The new barrier metal structure using selective wetting layer was proposed. This process using physical vapor deposition (PVD) Ti as the controlling layer for conformal chemical vapor deposition (CVD) Al layer shows an excellent filling capability for deep small contact and good electrical properties as well as the remarkable surface morphology, which can be applied for the new metallization process such as metal contacts and via holes filling.
Keywords :
aluminium; chemical vapour deposition; integrated circuit metallisation; metallic thin films; surface morphology; wetting; Al; CVD Al metallization; PVD; Ti; barrier metal structure; chemical vapor deposition; deep small contact filling; electrical properties; holes filling; metal contacts; physical vapor deposition; selective wetting layer; selective wetting process; surface morphology; Artificial intelligence; Atomic layer deposition; Bonding; Contacts; Filling; Gas insulated transmission lines; Hydrogen; Metallization; Moon; Tin;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219735
