• DocumentCode
    1844937
  • Title

    Nanoindentation response and microstructure of single-crystal silicon under different loads

  • Author

    Lee, Woei-Shyan ; Chen, Tao-Hsing ; Chang, Shuo-Ling

  • Author_Institution
    Dept. of Mech. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2009
  • fDate
    18-21 Oct. 2009
  • Firstpage
    164
  • Lastpage
    167
  • Abstract
    Nanoindentation tests are performed on single-crystal silicon wafers using a Berkovich indenter and maximum indentation loads of 30 mN, 40 mN, and 70 mN, respectively. The microstructural evolutions of the indented specimens are examined using transmission electron microscopy and selected area diffraction techniques. The results show that the unloading curve of the specimen indented to a maximum load of 30 mN has a smooth profile, whereas those of the specimens indented to 40 mN or 70 mN have a pop-out feature. The hardness and Young´s modulus of the silicon specimens reduce with an increasing indentation load, and have values of 15.8 GPa and 182 GPa, respectively, under the highest indentation load of 70 mN. A completely amorphous phase is induced within the indentation zone in the specimen indented to a maximum load of 30 mN, whereas a mixed structure comprising amorphous phase and nanocrystalline phase is found in the indentation zones in the specimens loaded to 40 mN and 70 mN, respectively.
  • Keywords
    Young´s modulus; crystal microstructure; elemental semiconductors; hardness; nanoindentation; silicon; transmission electron microscopy; Berkovich indenter; Si; Young´s modulus; hardness; microstructural evolutions; nanoindentation; selected area diffraction; single-crystal silicon wafers; transmission electron microscopy; Manganese; Load; Microstructural evolution; Nanoindentation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Molecular Medicine and Engineering (NANOMED), 2009 IEEE International Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-5528-7
  • Type

    conf

  • DOI
    10.1109/NANOMED.2009.5559094
  • Filename
    5559094