DocumentCode :
1844945
Title :
Paving the way for full-fluid IC metallization using supercritical carbon dioxide
Author :
Kondoh, E. ; Vezin, V. ; Shigama, K. ; Sunada, S. ; Kubo, K. ; Ohta, T.
Author_Institution :
Fac. of Eng., Univ. of Yamanashi, Japan
fYear :
2003
fDate :
2-4 June 2003
Firstpage :
141
Lastpage :
143
Abstract :
Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO2) fluids as a deposition medium. High-aspect-ratio filling capability, (111)-preferential growth, low temperature deposition possibility, important roles of solvent capability of scCO2 including F-less solid precursor utilization, and barrier metal deposition possibility are described.
Keywords :
copper; integrated circuit metallisation; metallic thin films; (111) preferential growth; CVD; Cu; PVD; barrier metal deposition; deposition medium; full fluid IC metallization; high aspect ratio filling capability; supercritical carbon dioxide; Carbon dioxide; Copper; Electrons; Filling; Hydrogen; Inductors; Metallization; Solvents; Sputtering; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
Type :
conf
DOI :
10.1109/IITC.2003.1219736
Filename :
1219736
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1844945
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