Title :
Low damage ashing using H2/He plasma for porous ultra low-k
Author :
Matsushita, A. ; Ohashi, N. ; Inukai, K. ; Shin, H.J. ; Sone, S. ; Sudou, K. ; Misawa, K. ; Matsumoto, I. ; Kobayashi, N.
Author_Institution :
Res. Dept., Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
Abstract :
Novel high-temperature (>150°C ) ashing using mixture of H2 and He gases (H2/He) was developed for low damage damascene fabrication of ultra low-k ILDs. Dependence of ashing characteristics on generated plasma configuration and temperature was investigated to optimize the process. Its applications to 320 nm pitch Cu/porous-MSQ (k=2.3) interconnects using 300 mm wafers showed no degradation in leakage currents and wiring capacitance. It is feasible for precise dual damascene etch using the conventional ArF photo resist (PR) mask process towards 65 nm technology node.
Keywords :
Fourier transform spectra; capacitance; copper; dielectric materials; dielectric thin films; infrared spectra; integrated circuit interconnections; leakage currents; masks; permittivity; photoresists; porous materials; sputter etching; 300 mm; 320 nm; 65 nm; ArF photoresist mask process; Cu; H2-He plasma; dual damascene etching; interconnects; leakage currents; low damage ashing; low damage damascene fabrication; plasma configuration; porous ultra low-k interlayer dielectrics; wafers; wiring capacitance; Character generation; Degradation; Fabrication; Gases; Helium; Leakage current; Plasma applications; Plasma properties; Plasma temperature; Temperature dependence;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219737
