Permalloy loaded transmission line for high-speed interconnects

Author

Wang, Pingshan ; Tien, Norman C. ; Kan, Edwin C.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2003

fDate

2-4 June 2003

Firstpage

159

Lastpage

161

Abstract

In this work, we demonstrate: (1) permalloy can be incorporated with planar transmission lines using CMOS compatible process. Patterning the permalloy structures can extend its application well into the microwave frequency range, (2) the transmission line characteristics do not change under up to 50 mA current excitations, (3) the patterned permalloy reduces the magnetic coupling between two adjacent transmission lines by approximately 10 dB. The demonstrated operation frequency range, current drivability and magnetic field shielding property show that the lines can be used for high-speed interconnect applications in CMOS technologies.

Keywords

CMOS integrated circuits; Permalloy; ferromagnetic materials; integrated circuit interconnections; magnetic shielding; transmission lines; 10 dB; CMOS compatible process; FeNi; Permalloy loaded transmission line; high-speed interconnects; magnetic coupling; magnetic field shielding; planar transmission lines; Capacitance; Distributed parameter circuits; Equivalent circuits; Frequency dependence; Inductance; Integrated circuit interconnections; Magnetic flux; Magnetic shielding; Saturation magnetization; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219741

Filename

1219741