Title :
Enhancing the electromigration resistance of copper interconnects
Author :
Dixit, Girish ; Padhi, Deenesh ; Gandikota, Srinivas ; Yahalom, Joseph ; Parikh, Suketu ; Yoshida, Naomi ; Shankaranarayanan, Krish ; Chen, Jay ; Maity, Nirmalaya ; Yu, Jick
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
Various factors such as grain boundary/surface diffusion as well as structural properties of materials are known to affect the final electro-migration (EM) behavior of copper interconnections. Results presented in this paper show that the barrier layer has a strong influence in controlling the width of EM failure distributions. EM tests of samples with alternate barrier, fill and capping layers show that atomic layer chemical vapor deposited (ALCVD) barrier and/or metallic cap layers are key to realize structures with superior EM lifetimes.
Keywords :
CVD coatings; copper; electric resistance; electromigration; failure analysis; grain boundary diffusion; integrated circuit interconnections; integrated circuit testing; surface diffusion; Cu; ULSI; atomic layer chemical vapor deposition; barrier layer; capping layer; copper interconnects; electromigration failure; electromigration lifetimes; electromigration resistance; electromigration test; grain boundary-surface diffusion; structural properties; Aluminum; Atomic layer deposition; Copper; Delay; Dielectrics; Electromigration; Etching; Integrated circuit interconnections; Planarization; Silicon compounds;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219742
