Title :
Effects of passivation layer on stress relaxation in Cu line structures
Author :
Dongwen Gan ; Yoon, Sean ; Ho, Paul S. ; Cresta, Phillippe ; Singh, Narendra ; Bower, Allan F. ; Leu, Jihpemg ; Shankar, Sadasivan
Author_Institution :
Lab. for Interconnect & Packaging, Univ. of Texas, Austin, TX, USA
Abstract :
In this study, we investigate the effect of passivation layer on mass transport by measuring stress relaxation in Cu damascene line structures. SiC and SiNx passivation layers are investigated and compared with no passivation to examine the bonding effect on mass transport. The observed stress relaxation behavior is analyzed by a kinetic model considering the contribution to mass transport via various diffusion paths including the passivation interface. Results of this study show a significant effect due to the passivation layer that can be attributed to the interfacial chemistry.
Keywords :
copper; kinetic theory; passivation; silicon compounds; stress relaxation; surface chemistry; surface diffusion; wide band gap semiconductors; Cu damascene line structures; Cu-SiC; Cu-SiNx; SiC passivation layers; SiNx passivation layers; interfacial chemistry; kinetic model; mass transport; stress relaxation; Bonding; Chemistry; Equations; Kinetic theory; Passivation; Silicon carbide; Stress measurement; Substrates; Thermal stresses; X-ray diffraction;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219748
